MOS amplifier gain-bandwidth enhancement using body signals

A technique for increasing the gain-bandwidth product (GBW) of integrated MOS amplifiers is presented. The scheme consists in simultaneously applying signals to the gate and to the body (substrate) terminals of the input MOSFETs. The ´body effect´ is thereby used to advantage, which is generally regarded as a nonideal effect to be avoided. The proposed method provides improvement over the traditional two-stage cascading technique and offers the additional advantage of distortion reduction.