• DocumentCode
    1504033
  • Title

    Increasing the Sensitivity of FGMOS Dosimeters by Reading at Higher Temperature

  • Author

    McNulty, Peter J. ; Poole, Kelvin F.

  • Author_Institution
    Department of Physics and Astronomy, Clemson University, Clemson, SC, USA
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    1113
  • Lastpage
    1116
  • Abstract
    Reading a UV erasable Programmed Read-Only Memory (UVPROM) memory programmed as a dosimeter at a higher temperature lowers the absorbed dose per bit-flip. This exposes latent measurements of lower absorbed doses, thus extending the dynamic range of the devices by two or more orders of magnitude.
  • Keywords
    Arrays; Dynamic range; Logic gates; Sensitivity; Temperature measurement; Temperature sensors; Transistors; Dosimetry; UV erasable Programmed Read-Only Memory (UVPROM) devices; floating gate metal oxide semiconductor (FGMOS) transistors; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2192288
  • Filename
    6190742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1504033