Title :
Enhanced oxygen plasma stripping of P+-implanted negative resist by hydrogen plasma pretreatment: temperature effects
Author_Institution :
Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/6/1991 12:00:00 AM
Abstract :
Hydrogen plasma pretreatment (90-115 degrees C, 10-30 min) of P+-implanted (100 keV, 1*1015 ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40 degrees C. At lower temperature for hydrogen plasma pretreatment (down to 40 degrees C) and higher temperature for oxygen plasma stripping (up to 115 degrees C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.
Keywords :
hydrogen; ion implantation; oxygen; phosphorus; plasma applications; polymer films; resists; semiconductor technology; sputter etching; temperature; 10 to 30 min; 40 to 115 degC; H plasmas pretreatment; HR-200; O plasma stripping; P +-implanted negative resist; plasma etching; temperature effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910670
