Title :
GaAlAs/GaAs active filter based on vertical cavity surface emitting laser
Author :
Koyama, Fumio ; Kubota, Sho ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Precision & Intelligence Lab., Yokohama, Japan
fDate :
6/6/1991 12:00:00 AM
Abstract :
A novel active filter based on a vertical cavity surface emitting laser is demonstrated. A 3 dB filter bandwidth as narrow as 0.08 nm was obtained. A polarisation independent and ultralow power consumption device is expected with 2-D array configuration.
Keywords :
III-V semiconductors; active filters; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; laser beam applications; laser cavity resonators; optical communication equipment; optical filters; semiconductor junction lasers; 3 dB filter bandwidth; GaAlAs-GaAs; WDM trunk lines; active filter; monolithic fabrication; polarisation independent; semiconductor lasers; surface emitting laser; ultralow power consumption; vertical cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910679
