• DocumentCode
    1504192
  • Title

    GaAs vertical JFET operated in bipolar mode (GaAs BMFET)

  • Author

    Schweeger, G. ; Cocorullo, G. ; Della Corte, F.G. ; Hartnagel, H.L. ; Vitale, G. ; Spirito, P.

  • Author_Institution
    Inst. fur Hochfrequenztech., TH Darmstadt, Germany
  • Volume
    27
  • Issue
    12
  • fYear
    1991
  • fDate
    6/6/1991 12:00:00 AM
  • Firstpage
    1097
  • Lastpage
    1098
  • Abstract
    The first experimental results of current amplification in a vertical JFET on GaAs operated in the bipolar mode are presented. hfe as high as 30 has been measured at high current densities. The technology of this device is described and possible applications are discussed.
  • Keywords
    III-V semiconductors; amplification; gallium arsenide; junction gate field effect transistors; BMFET; GaAs; bipolar mode; current amplification; current densities; vertical JFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910681
  • Filename
    76237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1504192