Title :
45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
Author :
Biyikli, Necmi ; Kimukin, Ibrahim ; Aytur, Orhan ; Gokkavas, M. ; Selim Unlu, M. ; Ozbay, Ekmel
Author_Institution :
Dept. of Electr. Eng., Bilkent Univ., Ankara, Turkey
fDate :
7/1/2001 12:00:00 AM
Abstract :
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; high-speed optical techniques; optical resonators; photodiodes; 11 ps; 45 GHz; 75 percent; 820 nm; AlGaAs-GaAs; AlGaAs-GaAs-based Schottky photodiodes; GHz bandwidth-efficiency; GHz bandwidth-efficiency product; ITO; ITO-Schottky photodiodes; InSnO; experimental setup limited temporal response; high-speed Schottky photodiodes; low efficiency; maximum peak efficiency; ps pulsewidth; resonance peaks; resonant cavity enhanced detector structure; resonant-cavity-enhanced; semitransparent Schottky-contact metals; thin absorption layers; transparent indium-tin-oxide Schottky contact material; vertically illuminated Schottky photodiodes; Bandwidth; Detectors; Mirrors; Optical device fabrication; Optical fiber communication; Optical scattering; Photodetectors; Photodiodes; Pulse measurements; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
