Title :
A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology
Author :
Zimmermann, H. ; Heide, T.
Author_Institution :
Inst. for Electr. Meas. & Circuit Design, Tech. Univ. of Vienna, Vienna, Austria
fDate :
7/1/2001 12:00:00 AM
Abstract :
Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10/sup -9/. The sensitivity of this OEIC in a 1.0-μm CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz./spl Omega/ effective transimpedance bandwidth product of the implemented amplifier is achieved.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; sensitivity; silicon; 1 Gbit/s; 1 mum; 1-/spl mu/m CMOS technology; 638 nm; 850 nm; Gb/s optical receiver; Si; Si optical receiver; bit-error rate; effective transimpedance bandwidth product; implemented amplifier; monolithically integrated; optical data transmission; optical interconnects; optoelectronic integrated circuit; sensitivity; vertical p-type-intrinsic-n-type photodiode; Bit error rate; CMOS technology; Data communication; Integrated circuit technology; Integrated optics; Optical interconnections; Optical receivers; Optical sensors; Optoelectronic devices; Photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
