Title :
Analysis and evaluation of charge-pumps realizable in 90nm CMOS technology
Author :
Nagy, G. ; Stopjakova, V. ; Arbet, D.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
Abstract :
This paper brings a detailed analysis and comparison of several charge pumps topologies that have not been optimized yet in order to make a relevant comparison of main parameters. The charge pumps were designed in a standard 90nm CMOS technology. A dedicated charge pump will be later used in an on-chip power management for energy-autonomous systems. In these applications, the maximum efficiency of energy converters and power management systems is necessary.
Keywords :
CMOS integrated circuits; charge pump circuits; CMOS technology; charge-pump topology; energy converters; energy-autonomous systems; on-chip power management system; size 90 nm; MOS devices; Switches; 90nm CMOS; analog IC; charge pumps;
Conference_Titel :
Radioelektronika (RADIOELEKTRONIKA), 2014 24th International Conference
Conference_Location :
Bratislava
Print_ISBN :
978-1-4799-3714-1
DOI :
10.1109/Radioelek.2014.6828414
