Title :
Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes
Author :
Wenus, Jakub ; Rutkowski, Jaroslaw ; Rogalski, Antoni
Author_Institution :
Inst. of Appl. Phys., Mil. Univ. of Technol., Warsaw, Poland
fDate :
7/1/2001 12:00:00 AM
Abstract :
In this paper, the performance of P-on-n double-layer heterojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and RoA product is analyzed. Also, the effect of lateral collection of diffusion current and photocurrent on photodiode parameters has been shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p-side doping concentration on photodiode parameters is described briefly
Keywords :
II-VI semiconductors; cadmium compounds; doping profiles; energy gap; mercury compounds; p-n heterojunctions; photodiodes; semiconductor device models; 77 K; HgCdTe; P-on-n double-layer heterojunction; backside-illuminated configuration; band-gap energy profiles; composition gradient; diffusion current; double-layer heterojunction photodiodes; lateral collection; p-side doping concentration; photocurrent; photodiode base layer geometry; photodiode parameters; quantum efficiency; two-dimensional analysis; Geometry; Heterojunctions; Infrared detectors; Molecular beam epitaxial growth; Performance analysis; Photoconductivity; Photodiodes; Photonic band gap; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
