Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High Speed

Author

Register, Leonard F. ; Hasan, Mohammad M. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

Volume

32

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

743

Lastpage

745

Abstract

The concept and the simulated device characteristics of ultralow-power and high-performance band-to-band tunneling field-effect transistors employing stepped broken-gap heterobarriers, HetTFETs, are presented. Abrupt switching is defined by the onset of a band overlap. High on-state currents are provided by narrow tunnel barriers defined by crystal growth rather than electrostatics. Sentaurus Device simulations exhibit current roll-offs by approximately 10⁶ over ranges of ~ 15 meV down to a few millielectronvolts, depending on the prototype device structure, and approximately constant above-threshold transconductance values approaching current CMOS-like values.

Keywords

crystal growth; high electron mobility transistors; low-power electronics; tunnel transistors; HetTFET; Sentaurus device simulation; band-to-band tunneling field effect transistors; crystal growth; high speed application; stepped broken gap heterobarrier tunneling transistor; ultralow power application; CMOS integrated circuits; Logic gates; Semiconductor device modeling; Switches; Transistors; Tunneling; Beyond complementary metal–oxide–semiconductor (beyond-CMOS); broken-gap heterobarrier; tunneling field-effect transistor (HetTFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2126038

Filename

5756446