• DocumentCode
    1505038
  • Title

    Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

  • Author

    Kang, Myung-Koo ; Kim, Si Joon ; Kim, Hyun Jae

  • Author_Institution
    Samsung Mobile Display, Cheonan, South Korea
  • Volume
    32
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    767
  • Lastpage
    769
  • Abstract
    The uniformity of threshold voltage (Vth) in sequential lateral solidification (SLS) thin-film transistors (TFTs) is investigated. Some SLS TFTs have higher Vth values than others, which causes problems in applications requiring a high level of TFT uniformity such as active-matrix organic light-emitting diode displays. Focused ion beam observations revealed that all TFTs with high Vth values had protrusions 3000- 7000 Å from the junction. Using a smart tilted-channel structure decreased the Vth variation to less than 0.2 V.
  • Keywords
    LED displays; focused ion beam technology; thin film transistors; active-matrix organic light-emitting diode displays; focused ion beam; sequential lateral solidification thin-film transistors; smart tilted-channel structure; threshold voltage uniformity; Junctions; Lasers; Logic gates; Scanning electron microscopy; Silicon; Thin film transistors; Crystallization; semiconductor thin films; silicon; thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2131112
  • Filename
    5756448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1505038