Title :
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
Author :
Lee, Dong Seup ; Chung, Jinwook W. ; Wang, Han ; Gao, Xiang ; Guo, Shiping ; Fay, Patrick ; Palacios, Tomàs
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
We report lattice-matched In0.17Al0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT). The key to this performance is the use of an oxygen plasma treatment to form a thin oxide layer on the InAlN barrier and to reduce the gate leakage current by more than two orders of magnitude. In addition, the RF transconductance (gm) collapse is reduced in the O2-treated devices, which results in a significant improvement in the fT . In a transistor with a gate length of 30 nm, an fT of 245 GHz is achieved, the highest value ever reported in GaN-based field-effect transistors.
Keywords :
high electron mobility transistors; indium compounds; InAlN-GaN; InAlN/GaN HEMT; RF transconductance; frequency 245 GHz; high-electron mobility transistors; oxygen plasma treatment; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Plasmas; Radio frequency; AlN; GaN; InAlN; current gain cutoff frequency $(f_{T})$; high-electron-mobility transistor (HEMT); oxygen plasma; transconductance $(g_{m})$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2132751
