DocumentCode :
1505063
Title :
The investigation of key technologies for sub-0.1-μm CMOS device fabrication
Author :
Xu, Qiuxia ; Qian, He ; Yin, Huaxiang ; Jia, Lin ; Ji, Honghao ; Chen, Baoqing ; Zhu, Yajiang ; Liu, Min ; Han, Zhensheng ; Hu, Huanzhang ; Qiu, Yulin ; Wu, Dexin
Author_Institution :
R&D Center of Microelectron., Acad. Sinica, Beijing, China
Volume :
48
Issue :
7
fYear :
2001
fDate :
7/1/2001 12:00:00 AM
Firstpage :
1412
Lastpage :
1420
Abstract :
The fabrication of sub-0.1-μm CMOS devices and ring oscillator circuits has been successfully explored. The key technologies include: lateral local super-steep-retrograde (SSR) channel doping with heavy ion implantation, 40-nm ultrashallow source/drain (S/D) extension, 3-nm nitrided gate oxide, dual p+/n+ poly-Si gate electrode, double sidewall scheme, e-beam lithography and RIE etching for sub-0.1-μm poly-Si gate pattern, thin and low sheet resistance SALICIDE process, etc. By these innovations in the technologies, high-performance sub-0.1-μm CMOS devices with excellent short-channel effects (SCEs) and good driving ability have been fabricated successfully; the shortest channel length is 70 nm. 57 stage unloaded 0.1-μm CMOS ring oscillator circuits exhibiting delay 23.8 ps/stage at 1.5 V, and 17.5 ps/stage and 12.5 ps/stage at 2 V and 3 V, respectively, are achieved
Keywords :
CMOS integrated circuits; MOSFET; electron beam lithography; integrated circuit technology; ion implantation; sputter etching; 0.1 mum; 1.5 to 3 V; 70 nm; CMOS device fabrication; RIE etching; SALICIDE; double sidewall scheme; driving ability; dual p+/n+ poly-Si gate electrode; e-beam lithography; heavy ion implantation; lateral local super-steep-retrograde channel doping; nitrided gate oxide; ring oscillator circuits; short-channel effects; ultrashallow source/drain extension; CMOS technology; Circuits; Doping; Electrodes; Etching; Fabrication; Ion implantation; Lithography; Ring oscillators; Technological innovation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.930660
Filename :
930660
Link To Document :
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