Title :
An Indium-Free Transparent Resistive Switching Random Access Memory
Author :
Zheng, K. ; Sun, X.W. ; Zhao, J.L. ; Wang, Y. ; Yu, H.Y. ; Demir, H.V. ; Teo, K.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
6/1/2011 12:00:00 AM
Abstract :
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3 -GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
Keywords :
bipolar memory circuits; gallium compounds; random-access storage; zinc compounds; ZnO:Ga-Ga2O3-ZnO-Ga2O3-ZnO:Ga; bipolar resistive switching; conduction mechanism; cycling characteristics; filament theory; indium-free transparent resistive switching random access memory; metal-organic chemical vapor deposition; retention time; visible transmittance; Electrodes; Ions; Random access memory; Sun; Switches; Zinc oxide; GZO; ZnO; indium free; transparent resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2126017
