Memory effect on a series connection of a ferroelectric capacitor and a p-n diode

A capacitance-voltage (C-V) measurement is conducted on a series connection of a ferroelectric capacitor and a p-n diode. This series connection is found to have a threshold hysteresis (“memory window”) width of 2.7 V as observed by C-V measurement. The threshold hysteresis is the result of the remnant polarization of the ferroelectric capacitor. Because the series connection has a memory window, it is expected to serve as a new nonvolatile, nondestructive readout, ferroelectric memory. Moreover, this connection is expected to offer easy processing by conventional ultra large-scale integration (ULSI) methods