Memory effect on a series connection of a ferroelectric capacitor and a p-n diode

Author

Inoue, Akira

Author_Institution

Tsukuba Res. Center, Sanyo Electr. Co. Ltd., Ibaraki, Japan

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1438

Lastpage

1441

Abstract

A capacitance-voltage (C-V) measurement is conducted on a series connection of a ferroelectric capacitor and a p-n diode. This series connection is found to have a threshold hysteresis (“memory window”) width of 2.7 V as observed by C-V measurement. The threshold hysteresis is the result of the remnant polarization of the ferroelectric capacitor. Because the series connection has a memory window, it is expected to serve as a new nonvolatile, nondestructive readout, ferroelectric memory. Moreover, this connection is expected to offer easy processing by conventional ultra large-scale integration (ULSI) methods

Keywords

ULSI; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; lead compounds; semiconductor diodes; C-V measurement; PZT; PbZrO3TiO3; ULSI; ferroelectric capacitor; memory window; nonvolatile ferroelectric memory; p-n diode; remnant polarization; series connection; threshold hysteresis width; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Diodes; Ferroelectric materials; Hysteresis; Large scale integration; Nonvolatile memory; Polarization; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930663

Filename

930663