A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding

Author

Matsumoto, Satoshi ; Hiraoka, Yasushi ; Sakai, Tatsuo ; Yachi, Toshiaki ; Ishiyama, Toshihiko ; Kosugi, Toshihiko ; Kamitsuna, Hideki ; Muraguchi, Masahiro

Author_Institution

NTT Telecommun. Energy Labs., Kanagawa, Japan

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1448

Lastpage

1453

Abstract

A quasi-SOI power MOSFET for radio frequency (RF) applications was fabricated by reversed silicon wafer direct bonding (RSDB). Its breakdown voltage was more than twice that of the conventional SOI power MOSFET and its other dc characteristics were almost the same. Its maximum oscillation frequency was about 15% higher than that of the conventional SOI power MOSFET. The power-added efficiency (PAE) of the quasi- SOI power MOSFET was higher than the SOI one. It showed excellent PAE of 68% at a drain bias of 3.6 V

Keywords

UHF field effect transistors; microwave field effect transistors; power MOSFET; semiconductor device breakdown; silicon-on-insulator; wafer bonding; 3.6 V; 68 percent; Si; breakdown voltage; dc characteristics; drain bias; oscillation frequency; power-added efficiency; quasi-SOI power MOSFET; radio frequency applications; reversed silicon wafer direct bonding; CMOS technology; Integrated circuit technology; MMICs; MOSFET circuits; Power MOSFET; Radio frequency; Silicon; Substrates; Transistors; Wafer bonding;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930665

Filename

930665