Title :
Noise characteristics of GaN-based IMPATTs
Author :
Panda, A.K. ; Pavlidis, D. ; Alekseev, E.A.
Author_Institution :
Nat. Inst. of Sci. & Technol., Orissa, India
fDate :
7/1/2001 12:00:00 AM
Abstract :
The potential of noise characteristics of Wz-phase and Znb-phase GaN IMPATTs is investigated and compared to Si and GaAs-based IMPATTs at D-band. The noise of GaN-based IMPATTs is found to be higher than that of GaAs-based IMPATTs but equivalent to Si-based IMPATTs. For increased operation temperature, the noise is found to decrease
Keywords :
III-V semiconductors; IMPATT diodes; gallium compounds; millimetre wave diodes; semiconductor device noise; D-band; GaN; III-V semiconductors; IMPATTs; Wz-phase; Znb-phase; noise characteristics; operation temperature; Diodes; Fluctuations; Frequency; Gallium nitride; Impact ionization; Low-frequency noise; Noise generators; Power generation; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
