Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors

Author

Reid, Adam R. ; Kleckner, Todd C. ; Jackson, Mike K. ; Marchesan, David ; Kovacic, Stephen J. ; Long, John R.

Author_Institution

Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1477

Lastpage

1479

Abstract

We present a study of thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors (HBTs), using a technique based on isothermal collector current measurement. Measured thermal resistance is in good agreement with a realistic three-dimensional (3-D) numerical model; emitter metallization, shallow trenches, and heat flow through the deep trench walls are all shown to have a significant effect on the thermal resistance

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; isolation technology; semiconductor device measurement; semiconductor device models; semiconductor materials; silicon; thermal resistance; 3D numerical model; Si-SiGe; deep trench wall; emitter metallization; heat flow; heterojunction bipolar transistors; isothermal collector current measurement; shallow trenches; thermal resistance; trench-isolated devices; Current measurement; Electrical resistance measurement; Fluid flow measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Isothermal processes; Metallization; Numerical models; Silicon germanium; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930671

Filename

930671