High frequency performance of large-grain polysilicon-on-insulator MOSFETs

Author

Wang, Hongmei ; Singh, Jaskirat ; Lam, Sang ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1480

Lastpage

1482

Abstract

Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L=240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (g_{m max})=68 mS/mm and 48 mS/mm at V_DS=3 V, respectively. The unity short circuit current gain frequencies (f_T) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher f_T can be achieved and have been demonstrated with the measured value of 5.1 GHz f_T for PMOSFET with a channel length of 0.7 μm. The f_T value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates

Keywords

MOSFET; elemental semiconductors; grain size; recrystallisation; silicon; silicon-on-insulator; 0.7 micron; 1.2 micron; 2.6 GHz; 3 V; 3.4 GHz; 48 mS/mm; 5.1 GHz; 68 mS/mm; NMOSFET; PMOSFET; Si; channel length; channel length scaling; high-temperature metal-induced-lateral-crystallization; large-grain polysilicon-on-insulator MOSFETs; transconductance; unity short circuit current gain frequencies; Amorphous silicon; Crystallization; Fabrication; Flexible printed circuits; Frequency; Grain boundaries; Grain size; MOSFETs; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930672

Filename

930672