• DocumentCode
    1505160
  • Title

    A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-aligned selective-epitaxial-growth SiGe HBTs with 8-ps ECL

  • Author

    Washio, Katsuyoshi ; Ohue, Eiji ; Oda, Katsuya ; Hayami, Reiko ; Tanabe, Masamichi ; Shimamoto, Hiromi

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • Volume
    48
  • Issue
    7
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    1482
  • Lastpage
    1487
  • Abstract
    A static frequency divider with a maximum operating frequency of up to 50 GHz and a multiplexer (MUX) and a demultiplexer (DEMUX) that both operate at 40 Gb/s were developed for future optical-fiber-link systems. These digital circuits were fabricated using ultra-high-speed self-aligned selective-epitaxial-growth SiGe-base hetero-junction bipolar transistors (HBTs) with self-aligned stacked metal/in-situ doped poly-Si electrodes. These HBTs provide a 95-GHz cutoff frequency, a 108-GHz maximum oscillation frequency, and a minimum emitter-coupled-logic (ECL) gate delay of 8 ps. The excellent results from this digital chipset show that SiGe HBT technology, with its high reliability and cost-effectiveness, will play an important role in future multi-gigabit per second optical-fiber-link systems
  • Keywords
    Ge-Si alloys; bipolar digital integrated circuits; demultiplexing equipment; emitter-coupled logic; frequency dividers; heterojunction bipolar transistors; integrated circuit reliability; multiplexing equipment; optical communication equipment; optical fibre communication; semiconductor materials; vapour phase epitaxial growth; 108 GHz; 40 Gbit/s; 50 GHz; 8 ps; 95 GHz; ECL; MUX/DEMUX; SiGe; cutoff frequency; demultiplexer; gate delay; maximum oscillation frequency; multiplexer; optical-fiber-link systems; reliability; self-aligned selective-epitaxial-growth HBTs; self-aligned stacked metal/in-situ doped poly-Si electrodes; static frequency divider; Bipolar transistors; Cutoff frequency; Delay; Digital circuits; Electrodes; Frequency conversion; Multiplexing; Optical frequency conversion; Silicon germanium; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.930673
  • Filename
    930673