A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance

Author

Yong Gui Xie ; Kasai, S. ; Takahashi, Hiroki ; Chao Jiang ; Hasegawa, H.

Author_Institution

Graduate Sch. of Electr. & Inf., Hokkaido Univ., Sapporo, Japan

Volume

22

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

312

Lastpage

314

Abstract

A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT (IG-PHEMT) utilizing a silicon interface control layer (Si ICL) was successfully fabricated and its DC and RF performances were characterized. The device showed high transconductance of 177 mS/mm even for a gate length of 1.6 μm. As compared with the conventional Schottky gate PHEMTs, the gate leakage current was reduced by 4 orders of magnitudes and the gate breakdown voltage was increased up to 39 V. Well-behaved RF characteristics with the current gain cutoff frequency, f_T, of 9 GHz and the maximum oscillation frequency, f_max, of 38 GHz were obtained for the 1.6 μm-gate-length device.

Keywords

Fermi level; III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; interface states; leakage currents; microwave field effect transistors; semiconductor device breakdown; silicon; 1.6 micron; 177 mS/mm; 38 GHz; 39 V; 9 GHz; InGaAs-InAlAs; InGaAs/InAlAs insulated gate PHEMT; Si; Si interface control layer; current gain cutoff frequency; gate breakdown voltage improvement; gate leakage current reduction; high DC performance; high RF performance; maximum oscillation frequency; pseudomorphic HEMT; Cutoff frequency; FETs; Indium compounds; Indium gallium arsenide; Insulation; Interface states; Leakage current; PHEMTs; Radio frequency; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.930675

Filename

930675