Title :
A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
Author :
Yong Gui Xie ; Kasai, S. ; Takahashi, Hiroki ; Chao Jiang ; Hasegawa, H.
Author_Institution :
Graduate Sch. of Electr. & Inf., Hokkaido Univ., Sapporo, Japan
fDate :
7/1/2001 12:00:00 AM
Abstract :
A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT (IG-PHEMT) utilizing a silicon interface control layer (Si ICL) was successfully fabricated and its DC and RF performances were characterized. The device showed high transconductance of 177 mS/mm even for a gate length of 1.6 μm. As compared with the conventional Schottky gate PHEMTs, the gate leakage current was reduced by 4 orders of magnitudes and the gate breakdown voltage was increased up to 39 V. Well-behaved RF characteristics with the current gain cutoff frequency, fT, of 9 GHz and the maximum oscillation frequency, fmax, of 38 GHz were obtained for the 1.6 μm-gate-length device.
Keywords :
Fermi level; III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; interface states; leakage currents; microwave field effect transistors; semiconductor device breakdown; silicon; 1.6 micron; 177 mS/mm; 38 GHz; 39 V; 9 GHz; InGaAs-InAlAs; InGaAs/InAlAs insulated gate PHEMT; Si; Si interface control layer; current gain cutoff frequency; gate breakdown voltage improvement; gate leakage current reduction; high DC performance; high RF performance; maximum oscillation frequency; pseudomorphic HEMT; Cutoff frequency; FETs; Indium compounds; Indium gallium arsenide; Insulation; Interface states; Leakage current; PHEMTs; Radio frequency; Silicon;
Journal_Title :
Electron Device Letters, IEEE
