Title :
Optical characteristics of InGaP/GaAs HPTs
Author :
Chung-Kun Song ; Sang-Hun Lee ; Kang-Dae Kim ; Jae-Hong Park ; Bon-Won Koo ; Do-Hyun Kim ; Chang-Hee Hong ; Yong-Kyu Kim ; Sung-Bum Hwang
Author_Institution :
Div. of Electr., Electron. & Comput. Eng., Dong-A Univ., Pusan, South Korea
fDate :
7/1/2001 12:00:00 AM
Abstract :
We examined the optical characteristics of InGaP/GaAs heterojunction phototransistor (HPT) directly compared with AlGaAs/GaAs HPT for the first time. Because of its inherent good electrical properties, the InGaP/GaAs HPT produced a high optical gain of about 61 at V/sub C/=3 V, I/sub B/=2 μA, for an input optical power of 1.23 μW. This is 2.5 times as high as that of the AlGaAs/GaAs HPT. In the transient response, the InGaP/GaAs HPT was a little inferior to the AlGaAs/GaAs HPT. This is due to the longer time delay caused by the photo-generated hole accumulation at the interface of heterojunction. The extended response time can be overcome by using a small load resistance in conjunction with the advantage of the superior optical gain.
Keywords :
III-V semiconductors; delays; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; photodetectors; phototransistors; surface recombination; thermionic emission; transient response; 1.23 muW; 2 muA; 3 V; InGaP-GaAs; InGaP/GaAs HPTs; OEIC; heterojunction phototransistor; optical characteristics; photo-generated hole accumulation; response time; time delay; transient response; Gallium arsenide; Heterojunctions; Optical noise; Optical sensors; Optoelectronic devices; Photodetectors; Phototransistors; Stimulated emission; Surface resistance; Transient response;
Journal_Title :
Electron Device Letters, IEEE
