Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications

Author

Wen-Chau Liu ; Kong-Beng Thei ; Hung-Ming Chuang ; Kun-Wei Lin ; Chin-Chuan Cheng ; Yen-Shih Ho ; Chi-Wen Su ; Shyh-Chyi Wong ; Chih-Hsien Lin ; Diaz, C.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

22

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

318

Lastpage

320

Abstract

The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless contact, both n/sup +/ and p/sup +/ polysilicon resistors with Ti- and Co-salicide self-aligned process are used at the ends of each resistor. A simple and useful model is proposed to analyze and calculate the essential parameters of polysilicon resistors including electrical delta W(/spl Delta/W), interface resistance R/sub interface/, and pure sheet resistance R/sub pure/. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-0.25 μm CMOS technology.

Keywords

CMOS integrated circuits; ULSI; elemental semiconductors; equivalent circuits; integrated circuit technology; resistors; semiconductor device models; silicon; 0.25 micron; CMOS ULSI applications; CMOS borderless contact; Co-salicide self-aligned process; CoSi; Si; Ti-salicide self-aligned process; TiSi; interface resistance; model; n/sup +/ polysilicon resistors; p/sup +/ polysilicon resistors; poly-Si resistors; resistor characterization; sheet resistance; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Electric resistance; MOS devices; Resistors; Semiconductor device modeling; Ultra large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.930677

Filename

930677