Title :
Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications
Author :
Wen-Chau Liu ; Kong-Beng Thei ; Hung-Ming Chuang ; Kun-Wei Lin ; Chin-Chuan Cheng ; Yen-Shih Ho ; Chi-Wen Su ; Shyh-Chyi Wong ; Chih-Hsien Lin ; Diaz, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2001 12:00:00 AM
Abstract :
The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless contact, both n/sup +/ and p/sup +/ polysilicon resistors with Ti- and Co-salicide self-aligned process are used at the ends of each resistor. A simple and useful model is proposed to analyze and calculate the essential parameters of polysilicon resistors including electrical delta W(/spl Delta/W), interface resistance R/sub interface/, and pure sheet resistance R/sub pure/. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-0.25 μm CMOS technology.
Keywords :
CMOS integrated circuits; ULSI; elemental semiconductors; equivalent circuits; integrated circuit technology; resistors; semiconductor device models; silicon; 0.25 micron; CMOS ULSI applications; CMOS borderless contact; Co-salicide self-aligned process; CoSi; Si; Ti-salicide self-aligned process; TiSi; interface resistance; model; n/sup +/ polysilicon resistors; p/sup +/ polysilicon resistors; poly-Si resistors; resistor characterization; sheet resistance; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Electric resistance; MOS devices; Resistors; Semiconductor device modeling; Ultra large scale integration; Voltage;
Journal_Title :
Electron Device Letters, IEEE
