DocumentCode
1505229
Title
Stack gate PZT/Al2O3 one transistor ferroelectric memory
Author
Chin, Albert ; Yang, M.Y. ; Sun, C.L. ; Chen, S.-Y.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
22
Issue
7
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
336
Lastpage
338
Abstract
We have developed a single transistor ferroelectric memory using stack gate PZT/Al/sub 2/O/sub 3/ structure. For the same /spl sim/40 /spl Aring/ dielectric thickness, the PZT/Al/sub 2/O/sub 3//Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO/sub 2//Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 us erase time is much faster than that of flash memory where the switching time is limited by erase time.
Keywords
MOS memory circuits; MOSFET; aluminium compounds; ferroelectric storage; lead compounds; 100 ns; 40 A; C-V characteristics; PZT-Al/sub 2/O/sub 3/-Si; PbZrO3TiO3-Al2O3-Si; ferroelectric MOSFET; single transistor ferroelectric memory; stack gate PZT/Al/sub 2/O/sub 3/ structure; switching time; threshold voltage shift; Annealing; Dielectrics; Ferroelectric films; Ferroelectric materials; Flash memory; MOSFET circuits; Random access memory; Sun; Temperature; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.930683
Filename
930683
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