Temperature dependency of 0.1 μm partially depleted SOI CMOSFET

Author

Wen-Kuan Yeh ; Chiutsung Huang ; Mao-Chieh Chen

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan

Volume

22

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

339

Lastpage

341

Abstract

This work investigates the floating body effect (FBE) on the partially depleted SOI devices at various temperatures for high-performance 0.1 μm MOSFET. The thermal effect on the device´s characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET without body contacted (FB-SOI). It is found that the threshold voltage (Vth) and the off state drain current (I/sub OFF/) of the BC-SOI devices are more temperature sensitive than those of the FB-SOI devices. For operation at higher temperatures, there is no apparent difference in driving capability between the BC-SOI and FB-SOI MOSFETs.

Keywords

MOSFET; leakage currents; low-power electronics; semiconductor device reliability; silicon-on-insulator; 0.1 micron; Si; body contacted MOSFET; driving capability; floating body effect; off state drain current; partially depleted SOI CMOSFET; thermal effect; threshold voltage; CMOS technology; CMOSFETs; Capacitance; Dielectric devices; Ion implantation; MOSFET circuits; Scalability; Temperature dependence; Temperature sensors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.930684

Filename

930684