DocumentCode
1505239
Title
High Responsivity, Bandpass Near-UV Photodetector Fabricated From PVA- 
Nanoparticles on a GaN Substrate
Author
Shao, Dali ; Qin, Liqiao ; Sawyer, Shayla
Author_Institution
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
4
Issue
3
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
715
Lastpage
720
Abstract
High photoresponsivity in the near-ultraviolet (UV) range was observed for a photodetector fabricated from polyvinyl-alcohol (PVA)-coated In2O3 nanoparticles. The high responsivity is due to large depletion region introduced by ion-adsorbed oxygen on the surface of In2O3 nanoparticles. Experiments demonstrated that the photodetector exhibited either a low-pass or bandpass spectral response, depending on the illumination directions. Transient characteristics of photoconductivity have been studied, which shows a rise time of 700 s and a fall time of 1350 s.
Keywords
adsorption; indium compounds; integrated optics; nanoparticles; nanophotonics; optical fabrication; optical polymers; photoconductivity; photodetectors; ultraviolet detectors; GaN; GaN substrate; In2O3-GaN; bandpass spectral response; fall time; high photoresponsivity bandpass near-UV photodetector; illumination directions; ion-adsorbed oxygen; large region depletion; low-pass spectral response; near-ultraviolet range; photoconductivity; polyvinyl-alcohol-coated nanoparticles; rise time; transient characteristics; Gallium nitride; Lighting; Nanoparticles; Photoconductivity; Photodetectors; Substrates; Surface treatment; $hbox{In}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2012.2195485
Filename
6192284
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