Characteristics of a Smiling Polysilicon Thin-Film Transistor

Author

Lin, Jyi-Tsong ; Chang, Tzu-Feng ; Eng, Yi-Chuen ; Lin, Po-Hsieh ; Chen, Cheng-Hsin

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat Sen Univ., Kaohsiung, Taiwan

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

830

Lastpage

832

Abstract

One-transistor dynamic random access memory (1T-DRAM) thin-film transistor (TFT) could lead the revolution of system-on-panel application. However, no useful 1T-DRAM is fabricated on the polysilicon (poly-Si) thin film up to now. In this letter, we present a novel method to fabricate a smiling poly-Si TFT for 1T-DRAM applications. The experimental results show that the short-channel effects can be reduced because the smiling scheme is used to suppress the charge sharing and the source/drain-tied scheme can help to overcome the self-heating. Moreover, the device fabrication is fully compatible with current complementary metal-oxide-semiconductor (CMOS) technology.

Keywords

CMOS integrated circuits; DRAM chips; thin film transistors; 1T-DRAM; charge sharing; complementary metal-oxide-semiconductor technology; device fabrication; one transistor dynamic random access memory; self heating; short channel effects; smiling polysilicon thin-film transistor; smiling scheme; system-on-panel; Logic gates; Programming; Random access memory; Scanning electron microscopy; Silicon; Thin film transistors; Data retention time; one-transistor dynamic random access memory (1T-DRAM); programming window; system on panel (SOP); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2191262

Filename

6192286