DocumentCode :
1505612
Title :
Modeling of power diodes with the lumped-charge modeling technique
Author :
Ma, Cliff L. ; Lauritzen, Peter O. ; Sigg, Jakob
Author_Institution :
Analogy Inc., Beaverton, OR, USA
Volume :
12
Issue :
3
fYear :
1997
fDate :
5/1/1997 12:00:00 AM
Firstpage :
398
Lastpage :
405
Abstract :
The lumped-charge modeling technique is used to build a simple, physics-based power diode model for circuit simulators. The model consists of simplified, but fundamental semiconductor device equations. The important characteristics of power diodes under static and dynamic conditions are obtained in this compact and efficient model
Keywords :
electric charge; power semiconductor diodes; semiconductor device models; circuit simulators; dynamic conditions; fundamental semiconductor device equations; lumped-charge modeling technique; power diodes modelling; semiconductor device characteristics; static conditions; Analytical models; Circuit simulation; Computational efficiency; Parameter extraction; Physics; Poisson equations; Power system modeling; Semiconductor devices; Semiconductor diodes; Thyristors;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.575666
Filename :
575666
Link To Document :
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