Title :
Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon
Author :
Kubota, Alison A. ; Economou, Demeter J.
Author_Institution :
Dept. of Chem. Eng., Houston Univ., TX, USA
fDate :
2/1/1999 12:00:00 AM
Abstract :
We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The surface has the tendency to form oxide islands as the film is sputtered away by 100 eV Ar+ ions. We also show an image of a “peeling” oxide strand which forms occasionally as a result of ions impacting at an angle of 45° from normal
Keywords :
digital simulation; ion-surface impact; island structure; molecular dynamics method; silicon compounds; surface structure; 100 eV; Ar; Ar+ ions; Si; SiO; ion impact angle; ion-induced rearrangement; ion-irradiated ultrathin oxide films; molecular dynamics simulation; molecular dynamics simulations; molecular visualisation software; oxide islands; peeling oxide strand; silicon surfaces; sputtering; surface cleaning; three-dimensional images; time-resolved animation; Argon; Atomic layer deposition; Filling; Plasma temperature; Rough surfaces; Semiconductor films; Silicon; Sputtering; Surface cleaning; Surface roughness;
Journal_Title :
Plasma Science, IEEE Transactions on
