DocumentCode :
1505937
Title :
Room Temperature Optically Pumped 2.56- 
Lasers With “W” Type InGaAs/GaAsSb Quantum Wells on InP Substrates
Author :
Pan, Chien-Hung ; Chang, Chia-Hao ; Lee, Chien-Ping
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
24
Issue :
13
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1145
Lastpage :
1147
Abstract :
The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density ~ 40 kW/cm2. The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 μm is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; InGaAs-GaAsSb-InP; W-type quantum well; dramatic line width shrinkage; longest lasing wavelength; midinfrared lasing; optically pumped lasers; temperature 293 K to 298 K; wavelength 2.56 mum; Indium gallium arsenide; Indium phosphide; Measurement by laser beam; Quantum well lasers; Substrates; Temperature; Temperature measurement; InP-based; midinfrared lasers; optically pumped; type-II “W” type quantum wells;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2197193
Filename :
6193125
Link To Document :
