Simple frequency-domain analysis of MOSFET-including nonquasi-static effect

Author

Lee, Kyu-Il ; Kim, Jinsoo ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

Volume

20

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

867

Lastpage

876

Abstract

We propose a harmonic balance technique for the frequency-domain analysis of the metal-oxide-semiconductor field-effect transistor (MOSFET) operation. The MOSFET model in our approach is based on the charge-sheet and the nonquasi-static MOSFET models in the channel region with a harmonic balance technique applied to the channel charges. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortion occurrence in the MOSFET device due to the nonlinear response of the channel charges

Keywords

MOSFET; frequency-domain analysis; harmonic distortion; semiconductor device models; MOSFET; channel charges; channel region; charge-sheet model; computationally efficient tool; frequency-domain analysis; harmonic balance technique; harmonic distortion occurrence; nonlinear response; nonquasi-static effect; Analytical models; CMOS technology; Circuit simulation; Computational modeling; Frequency domain analysis; Harmonic analysis; Harmonic distortion; MOSFET circuits; Radio frequency; Time domain analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.931011

Filename

931011