Title :
Wide-band high-efficiency optical-to-electrical conversion stimulus probe heads for testing large-signal responses of high-speed electronic devices
Author :
Otsuji, Taiichi ; Kato, Kazutoshi ; Kimura, Shunji ; Nagatsuma, Tadao
Author_Institution :
Dept. of Control Eng. & Sci., Kyushu Inst. of Technol., Fukuoka, Japan
fDate :
5/1/1999 12:00:00 AM
Abstract :
Wide-band high-efficiency optical-to-electrical conversion stimulus probe heads have been developed for testing large-signal responses of high-speed electronic devices. Two types of such probes were demonstrated using a 1.55-μm 85-GHz-bandwidth waveguide p-i-n photodiode. The type-I probe employs a simple semirigid coaxial cable with a bias network for the electrical-signal transmission, resulting in a very low modal dispersion of <1.0 ps. The highest -3-dB bandwidth of 60 GHz was obtained for an output voltage of 230 mV p-p, and was maintained beyond 50 GHz for output voltages of up to 400 mVp-p. The type-II probe employs a broad-band InP high electron-mobility transistor distributed amplifier that boosts the electrical output signal amplitude over 1 Vp-p. The -3-dB bandwidth is 40 (35) GHz for output voltages up to 500 (1000) mVp-p
Keywords :
high-speed optical techniques; optical waveguide components; p-i-n photodiodes; probes; semiconductor device testing; 1.55 micron; 40 GHz; 60 GHz; 85 GHz; InP; InP HEMT distributed amplifier; coaxial cable; high-speed electronic device; large-signal response; testing; waveguide p-i-n photodiode; wideband optical-to-electrical conversion stimulus probe head; Bandwidth; Electronic equipment testing; High speed optical techniques; High-speed electronics; Optical devices; Optical waveguides; PIN photodiodes; Probes; Voltage; Wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on