Title :
TOM3 capacitance model: linking large- and small-signal MESFET models in SPICE
Author :
Hallgren, Robert B. ; Litzenberg, Paul H.
Author_Institution :
TriQuint Semicond. Inc., Hillsboro, OR, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
Improved accuracy in the modeled gate capacitance of GaAs metal-semiconductor field-effect transistors (MESFET´s) is obtained in SPICE using conservation of charge in an implanted layer. The gate junction creates a natural partition between mobile and fixed channel charges. Relating the gate charge to the channel current creates gate capacitances dependent upon the channel current derivatives linking the small-signal model to the large-signal equations. Results are illustrated using a depletion-mode MESFET
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; UHF field effect transistors; capacitance; gallium arsenide; ion implantation; microwave field effect transistors; semiconductor device models; GaAs; MESFET models; SPICE; TOM3 capacitance model; channel current; channel current derivatives; charge conservation; depletion-mode MESFET; fixed channel charges; gate capacitance; gate junction; implanted layer; large-signal models; mobile channel charges; natural partition; small-signal models; Capacitance; Circuit simulation; Design automation; FETs; Gallium arsenide; Joining processes; MESFETs; Nonlinear equations; SPICE; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
