Title :
Oxide HDP-CVD Modeling for Shallow Trench Isolation
Author :
Roussy, Agnès ; Delachet, Laura ; Belharet, Djaffar ; Pinaton, Jacques ; Collot, Philippe
Author_Institution :
Center Microelectron. de Provence, Ecole Nat. Super. des Mines de St.-Etienne, Gardanne, France
Abstract :
A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run-to-run system in order to reduce the lot-to-lot variability (a lot equals 25 wafers). A model is developed to control the MeanThickness and the Range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.
Keywords :
CMOS integrated circuits; isolation technology; plasma CVD; semiconductor device models; CMOS technology; high-density plasma chemical vapor deposition; lot-to-lot variability; oxide HDP-CVD modeling; run-to-run system; shallow trench isolation; Design of experiment (DOE); high-density plasma chemical vapor deposition (HDP-CVD) process; run-to-run (R2R) control;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2010.2051749
