DocumentCode
1506183
Title
Single-Photon Detectors in the Terahertz Range
Author
Komiyama, Susumu
Author_Institution
Dept. of Basic Sci., Univ. of Tokyo, Tokyo, Japan
Volume
17
Issue
1
fYear
2011
Firstpage
54
Lastpage
66
Abstract
Semiconductor quantum dot detectors as well as semiconductor charge-sensitive infrared phototransistors are described. They are the only detectors that can count single photons in the terahertz region at present. In terms of the noise equivalent power (NEP), the detectors realize experimental values on the order of 10-21 W/Hz1/2, while theoretically expected values are even much lower, on the order of 10-24 W/Hz1/2. These NEP values are by several orders of magnitude lower than any other state-of-the-art highly sensitive detectors. In addition to the outstanding sensitivity, the detectors are featured by strong advantage of huge current responsivity (106-1010 A/W ) and extremely large dynamic range of response (106-108). The mechanism of detection as well as application of the detectors is discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; microwave photonics; photodetectors; phototransistors; semiconductor quantum dots; terahertz wave detectors; GaAs-AlxGa1-xAs; current responsivity; noise equivalent power; quantum dot detectors; semiconductor charge-sensitive infrared phototransistors; semiconductor quantum dot detectors; single-photon detectors; terahertz range detectors; Photon-counting detector; quantum dot (QD); quantum well (QW); single-electron transistor (SET); terahertz (THz);
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2010.2048893
Filename
5475208
Link To Document