• DocumentCode
    1506183
  • Title

    Single-Photon Detectors in the Terahertz Range

  • Author

    Komiyama, Susumu

  • Author_Institution
    Dept. of Basic Sci., Univ. of Tokyo, Tokyo, Japan
  • Volume
    17
  • Issue
    1
  • fYear
    2011
  • Firstpage
    54
  • Lastpage
    66
  • Abstract
    Semiconductor quantum dot detectors as well as semiconductor charge-sensitive infrared phototransistors are described. They are the only detectors that can count single photons in the terahertz region at present. In terms of the noise equivalent power (NEP), the detectors realize experimental values on the order of 10-21 W/Hz1/2, while theoretically expected values are even much lower, on the order of 10-24 W/Hz1/2. These NEP values are by several orders of magnitude lower than any other state-of-the-art highly sensitive detectors. In addition to the outstanding sensitivity, the detectors are featured by strong advantage of huge current responsivity (106-1010 A/W ) and extremely large dynamic range of response (106-108). The mechanism of detection as well as application of the detectors is discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; microwave photonics; photodetectors; phototransistors; semiconductor quantum dots; terahertz wave detectors; GaAs-AlxGa1-xAs; current responsivity; noise equivalent power; quantum dot detectors; semiconductor charge-sensitive infrared phototransistors; semiconductor quantum dot detectors; single-photon detectors; terahertz range detectors; Photon-counting detector; quantum dot (QD); quantum well (QW); single-electron transistor (SET); terahertz (THz);
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2010.2048893
  • Filename
    5475208