DocumentCode
1506198
Title
Silicon on quartz by solid-state diffusion bonding (SSDB) technology
Author
Zhan, Junpeng ; Tong, Q.-Y.
Volume
24
Issue
11
fYear
1988
fDate
5/26/1988 12:00:00 AM
Firstpage
691
Lastpage
692
Abstract
Silicon wafer and quartz have been successfully bonded together by a two-step thermal treatment process. SIMS measurements shows that after molecular surface activated solvent treatment, the amount of OH on the silicon or quartz surface, which is essential to the first step (low-temperature) bonding strength, is one order of magnitude higher than that on the original silicon or quartz surface. After a high-temperature (850-1250°C) solid-state diffusion process, the bonding strength between silicon and quartz is greatly increased to 150-185 kg/cm2. The material and electrical properties of the silicon on quartz substrate compares favourably with those of the bulk silicon wafer
Keywords
elemental semiconductors; heat treatment; integrated circuit technology; quartz; semiconductor technology; silicon; 850 to 1250 degC; SIMS measurements; SOI ICs; Si wafer; Si-SiO2; SiO2; bonding strength; electrical properties; molecular surface activated solvent treatment; semiconductor technology; solid-state diffusion bonding; two-step thermal treatment process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5757
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