DocumentCode
150645
Title
Integrated 60-GHz CMOS variable-gain low-noise amplifier and full 360° phase shifter for phased-array RF receiving system
Author
Chun-Han Yu ; Pei-Hua Lo ; Jhin-Ying Lyu ; Hsin-Chih Kuo ; Huey-Ru Chuang
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2014
fDate
19-23 Jan. 2014
Firstpage
59
Lastpage
61
Abstract
This paper presents a 60-GHz integrated variable-gain low-noise amplifier (VG-LNA) and full 360° phase shifter (PS) circuit, fabricated in 90-nm CMOS process, for phased-array antenna receiving system. In VG-LNA design, variable gain is achieved by a current-steering structure and low phase variation is achieved by a body-floating technique. The proposed 360° PS is implemented by cascading a 180° reflection-type and a 180° switch-type phase shifters. The measurement results show that a phase control range of 360° with a gain variation of 3.7 dB can be achieved. In terms of gain controlling capability, a 11.3-dB gain control range with a 13.5° phase variation is obtained. The total power consumption is 18 mW from a 1.5 V power supply. The chip size is 1.15 × 0.78 mm2.
Keywords
antenna phased arrays; low noise amplifiers; phase shifters; receiving antennas; CMOS variable gain low noise amplifier; VG-LNA; body-floating technique; current-steering structure; frequency 60 GHz; phase shifter circuit; phased-array RF receiving system; phased-array antenna receiving system; power 18 mW; reflection-type; size 0.78 mm; size 1.15 mm; size 90 nm; switch-type phase shifters; voltage 1.5 V; Abstracts; CMOS integrated circuits; CMOS technology; Couplers; Process control; Radio frequency; Reflection; 360° phase shifter (PS); 60-GHz; 90-nm; CMOS; phased-array receiver; variable gain low-noise amplifier (VG-LNA);
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location
Newport Beach, CA
Type
conf
DOI
10.1109/SiRF.2014.6828502
Filename
6828502
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