Title :
The analysis of transit-time effect of bipolar base collector junction breakdown
Author :
Xiaochuan Bi ; Trombley, Django ; Krakowski, Tracey ; Weiser, Doug
Author_Institution :
Texas Instrum., Santa Clara, CA, USA
Abstract :
This paper analyzes the transit-time effect of a bipolar biased at base-collector junction breakdown condition. Both simulation and experiment show that dynamic negative resistance, due to the transit-time effect, can be achieved under the avalanche breakdown condition. Therefore, a bipolar biased at breakdown can be used as a transit-time diode, with the potential to generate RF power for millimeter / sub-millimeter frequency applications.
Keywords :
avalanche breakdown; transit time devices; avalanche breakdown; bipolar base collector junction breakdown; dynamic negative resistance; transit time effect; Electric breakdown; Junctions; Radio frequency; Resistance; Schottky diodes; Tunneling; BiCMOS; impact avalanche transit-time (IMPATT) diode; millimeter wave circuits;
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
DOI :
10.1109/SiRF.2014.6828504
