A TCAD-based roadmap for high-speed SiGe HBTs

Author

Schroter, Michael ; Rosenbaum, T. ; Voinigescu, S.P. ; Chevalier, P.

Author_Institution

CEDIC, Tech. Univ. Dresden, Dresden, Germany

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

80

Lastpage

82

Abstract

Results of the 2013 technology roadmap for SiGe HBTs and associated benchmark circuits at mm-wave frequencies are presented. For the first time, the roadmap has been based on a seamless set of TCAD device simulation tools in order to obtain consistent compact model parameters for the complete transistor structure. All known transport, structural parasitic and temperature effects have been included in the results. The benchmark circuits, comprising an LNA, PA, VCO and CML RO, have been optimized for each technology node and a variety of commercially relevant frequencies.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; transport processes; CML RO; LNA; PA; SiGe; TCAD device simulation tools; TCAD roadmap; VCO; benchmark circuits; compact model parameter; complete transistor structure; heterojunction bipolar transistors; high speed HBT; low moise amplifier; millimeterwave frequency; power amplifier; ring oscillator; structural parasitic; temperature effect; transport process; voltage controlled oscillator; Capacitance; Current density; Integrated circuit modeling; Mathematical model; Semiconductor device modeling; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828505

Filename

6828505