DocumentCode
1506650
Title
The present state of the art in high-power semiconductor devices
Author
Satoh, Katsumi ; Yamamoto, Masanori
Author_Institution
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Volume
89
Issue
6
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
813
Lastpage
821
Abstract
Since the mid-1990s, thyristors and GTO capacities have been increased, resulting from the use of 6-in floating zone (FZ) Si wafers (which were developed in 1993) and the integration of new technologies for wafer processing and design (also developed in the 1990s). As devices have become more capable, the next step in moving forward is to take these self-turnoff devices and bring higher performance to power electronics, thereby widening the application field
Keywords
elemental semiconductors; insulated gate bipolar transistors; power bipolar transistors; silicon; thyristors; zone melting; 6 inch; GTO; Si; application field; floating zone Si wafers; high-power semiconductor devices; self-turnoff devices; state of the art; thyristors; wafer processing; Charge carrier lifetime; Cities and towns; History; Insulated gate bipolar transistors; Paper technology; Power electronics; Process design; Semiconductor devices; Thyristors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.931470
Filename
931470
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