DocumentCode
1506656
Title
Locking range, phase noise and power spectrum of an injection-locked semiconductor laser
Author
Lidoyne, O. ; Gallion, P. ; Chabran, C. ; Debarge, G.
Author_Institution
Dept. Commun., Ecole Nat. Superieure des Telecommun., France
Volume
137
Issue
3
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
147
Lastpage
154
Abstract
The locking range of an optically injected semiconductor laser is discussed, including the spectral hole burning and lateral carrier diffusion effects. These effects are modelled with a gain suppression coefficient. In addition, an expression for the mean square phase jitter of an injection-locked semiconductor laser is derived when these effects are insignificant. The power spectrum of a locked laser is obtained and compared with experimental results
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical hole burning; semiconductor junction lasers; AlGaAs; gain suppression coefficient; injection-locked semiconductor laser; lateral carrier diffusion effects; locked laser power spectrum; locking range; mean square phase jitter; optically injected; phase noise; power spectrum; spectral hole burning;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
52931
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