Title :
Low loss 67-GHz coplanar waveguides and spiral inductors on 100 kΩcm gold-doped high resistivity Cz-Silicon
Author :
Abuelgasim, Abdelgadir ; Hashim, Noramiza ; Chong, H.M.C. ; Ashburn, Peter ; De Groot, C.H.
Author_Institution :
Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
In this paper, we demonstrate the ability of deep level doping to reduce the substrate losses in coplanar waveguides and spiral inductors. Room temperature resistivity of Au doped Czochralski-Si increases from 50Ωcm for n-type Si to 100 kΩcm for Au doped Si and temperature dependent Hall measurements show a six order increase in resistivity at lower temperatures which is entirely due to a decrease in free carrier concentration. The mobility is not affected and is determined by lattice scattering only. The resistivity follows theoretical models demonstrating that nearly 100% of the doped Au is electrically active. Coplanar waveguides show a reduction in attenuation at 67GHz from 0.88 dB/mm to 0.30 dB/mm. Spiral inductors fabricated in the compensated substrates show a 50% improvement in quality-factor with respect to high resistivity float zone wafers demonstrating the use of these substrates for integrated passive devices.
Keywords :
coplanar waveguides; gold; inductors; millimetre wave devices; silicon; Au; Czochralski-Si; Hall measurements; Si; coplanar waveguides; deep level doping; free carrier concentration; frequency 67 GHz; integrated passive devices; lattice scattering; spiral inductors; substrate losses; temperature 293 K to 298 K; Attenuation; Conductivity; Coplanar waveguides; Gold; Inductors; Silicon; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
DOI :
10.1109/SiRF.2014.6828514