Large static converters for industry and utility applications

Author

Akagi, Hirofumi

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

Volume

89

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

976

Lastpage

983

Abstract

The emergence of high-power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables large static converters to expand into utility and industry applications. For instance, a ±80 kV 50 MW HVDC transmission system based on a string of many IGBTs connected in series was commissioned in 1999. This paper describes the present status of large static converters, with focus on their applications to utility and industry. The applications discussed are: HVDC transmission system, UPFC, flywheel energy storage system, pumped hydro plant adjustable speed generator, active filters for power conditioning, and steel mill drives. The paper also describes their future prospects and directions in the 21st century, including the personal views and expectations of the author

Keywords

HVDC power convertors; MOS-controlled thyristors; active filters; electric drives; flywheels; insulated gate bipolar transistors; load flow control; power convertors; power filters; pumped-storage power stations; thyristor convertors; variable speed gear; 50 MW; 80 kV; HVDC transmission system; IGBT; active filters; adjustable speed generator systems; flywheel energy storage; gate-commutated turn-off thyristors; high-power semiconductor devices; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate-commutated thyristors; power conditioning; pumped hydroelectric plants; static converters; steel mill drives; unified power flow controllers; Active filters; Energy storage; Flywheels; HVDC transmission; Industry applications; Insulated gate bipolar transistors; Insulation; Power generation; Semiconductor devices; Thyristors;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.931498

Filename

931498