DocumentCode :
1506737
Title :
Large static converters for industry and utility applications
Author :
Akagi, Hirofumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Volume :
89
Issue :
6
fYear :
2001
fDate :
6/1/2001 12:00:00 AM
Firstpage :
976
Lastpage :
983
Abstract :
The emergence of high-power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables large static converters to expand into utility and industry applications. For instance, a ±80 kV 50 MW HVDC transmission system based on a string of many IGBTs connected in series was commissioned in 1999. This paper describes the present status of large static converters, with focus on their applications to utility and industry. The applications discussed are: HVDC transmission system, UPFC, flywheel energy storage system, pumped hydro plant adjustable speed generator, active filters for power conditioning, and steel mill drives. The paper also describes their future prospects and directions in the 21st century, including the personal views and expectations of the author
Keywords :
HVDC power convertors; MOS-controlled thyristors; active filters; electric drives; flywheels; insulated gate bipolar transistors; load flow control; power convertors; power filters; pumped-storage power stations; thyristor convertors; variable speed gear; 50 MW; 80 kV; HVDC transmission system; IGBT; active filters; adjustable speed generator systems; flywheel energy storage; gate-commutated turn-off thyristors; high-power semiconductor devices; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate-commutated thyristors; power conditioning; pumped hydroelectric plants; static converters; steel mill drives; unified power flow controllers; Active filters; Energy storage; Flywheels; HVDC transmission; Industry applications; Insulated gate bipolar transistors; Insulation; Power generation; Semiconductor devices; Thyristors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.931498
Filename :
931498
Link To Document :
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