DocumentCode
1506744
Title
Measurement of proton radiation damage to Si avalanche photodiodes
Author
Sun, Xiaoli ; Reusser, Daniel ; Dautet, Henri ; Abshire, James B.
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume
44
Issue
12
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
2160
Lastpage
2166
Abstract
The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD´s) were measured. The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10°C under 16.2 MeV protons. There was little change in the breakdown voltage with the radiation doses up to 30 krad(Si). The increase in the total dark currents below the breakdown voltage was insignificant until 3 krad(Si)
Keywords
avalanche photodiodes; dark conductivity; elemental semiconductors; leakage currents; proton effects; silicon; -10 degC; 16.2 MeV; Si; avalanche photodiodes; breakdown voltage; bulk leakage current; proton radiation damage; radiation doses; total dark currents; Avalanche photodiodes; Earth; Electrons; Extraterrestrial measurements; Ionization; Leakage current; Neutrons; Photodetectors; Protons; Sun;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.644630
Filename
644630
Link To Document