Title :
A zero DC-power low-distortion mixer for wireless applications
Author :
Kucera, J.J. ; Lott, U.
Author_Institution :
Lab. for EM Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fDate :
4/1/1999 12:00:00 AM
Abstract :
A fully integrated passive field-effect transistor (FET) mixer with a measured conversion loss of 7 dB and a -1 dB input compression point of -1.5 dBm at 1.9 GHz was fabricated in a standard 0.6 μm GaAs MESFET process. Zero DC-power consumption, excellent dynamic performance, and low loss make this circuit very suitable for low-power low-voltage wireless applications.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC mixers; UHF integrated circuits; UHF mixers; electric distortion; gallium arsenide; integrated circuit design; integrated circuit noise; low-power electronics; mobile radio; passive networks; 0.6 micron; 1.9 GHz; 7 dB; GaAs; GaAs MESFET process; LV wireless applications; dynamic performance; field-effect transistor mixer; integrated passive FET mixer; low loss circuit; low-distortion mixer; low-power wireless applications; resistive mixer; zero DC-power consumption; Circuit simulation; Energy consumption; FETs; Gallium arsenide; Linearity; Loss measurement; Mixers; Noise figure; Radio frequency; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
