Title :
Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy
Author :
Shi, Yan ; Zhao, Jian H. ; Sarathy, Jiten ; Lee, Hao ; Olsen, Gregory H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
GaInAsSb/AlGaAsSb strain compensated multiple quantum well (MQW) p-i-n structures grown by molecular beam epitaxy on GaSb substrates have been successfully fabricated into tunable photodiodes, which showed a large photoresponse peak shift up to 30 meV (80 nm) at 77 K under a reverse bias of 10 V due to quantum confined Stark effect (QCSE). The QCSE persists up to room temperature and the values of the excitonic absorption peak shifts agree well with the calculated results. Based on the observed QCSE, an electrically tunable resonant cavity enhanced photodetector with strain compensated MQW structure is proposed and modeled
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 10 V; 30 meV; 77 K; GaInAsSb-AlGaAsSb; excitonic absorption peak shifts; molecular beam epitaxy; p-i-n photodiode structures; photoresponse peak shift; quantum confined Stark effect; resonant cavity enhanced photodetector; reverse bias; strain-compensated multiple quantum wells; tunable photodetectors; Absorption; Capacitive sensors; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Potential well; Quantum well devices; Stark effect; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
