Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

Author

Shi, Yan ; Zhao, Jian H. ; Sarathy, Jiten ; Lee, Hao ; Olsen, Gregory H.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

44

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2167

Lastpage

2173

Abstract

GaInAsSb/AlGaAsSb strain compensated multiple quantum well (MQW) p-i-n structures grown by molecular beam epitaxy on GaSb substrates have been successfully fabricated into tunable photodiodes, which showed a large photoresponse peak shift up to 30 meV (80 nm) at 77 K under a reverse bias of 10 V due to quantum confined Stark effect (QCSE). The QCSE persists up to room temperature and the values of the excitonic absorption peak shifts agree well with the calculated results. Based on the observed QCSE, an electrically tunable resonant cavity enhanced photodetector with strain compensated MQW structure is proposed and modeled

Keywords

III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 10 V; 30 meV; 77 K; GaInAsSb-AlGaAsSb; excitonic absorption peak shifts; molecular beam epitaxy; p-i-n photodiode structures; photoresponse peak shift; quantum confined Stark effect; resonant cavity enhanced photodetector; reverse bias; strain-compensated multiple quantum wells; tunable photodetectors; Absorption; Capacitive sensors; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Potential well; Quantum well devices; Stark effect; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.644631

Filename

644631