DocumentCode :
150688
Title :
A 65nm CMOS 0.1–2.1GHz linear-in-dB VGA with active-inductor bandwidth extension for the Square Kilometer Array
Author :
Ge Wu ; Belostotski, Leonid ; Haslett, J.W.
Author_Institution :
Schulich Sch. of Eng., Univ. of Calgary, Calgary, AB, Canada
fYear :
2014
fDate :
19-23 Jan. 2014
Firstpage :
19
Lastpage :
21
Abstract :
In this paper, a 65 nm CMOS broadband linear-in-dB Variable-Gain Amplifier (VGA) circuit for use in the Square Kilometer Array (SKA) is proposed. Active inductor loads are used to extend the 3 dB bandwidth of the VGA over previous designs. Measurements show that the VGA is broadband, has a 3 dB upper band edge of 2.1 GHz, and easily covers the mid-band SKA range from 0.7 GHz to 1.4 GHz. The VGA has a maximum controllable gain range from -12.5 dB to +22.4 dB and a linear-in-dB range with 1 dB error from -12.5 dB to +16 dB. Measured input P1dB is approximately -22 dBm. The power consumption of the VGA is 1.1 mW with another 5.1 mW consumed by an input-match circuit and 11 mW consumed by an output buffer circuit.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; buffer circuits; inductors; power consumption; wideband amplifiers; CMOS; VGA; active inductor; active-inductor bandwidth extension; broadband variable-gain amplifier circuit; buffer circuit; frequency 0.1 GHz to 2.1 GHz; gain -12.5 dB to 22.4 dB; power 1.1 mW; power 11 mW; power 5.1 mW; power consumption; size 65 nm; square kilometer array; Active inductors; Bandwidth; CMOS integrated circuits; Frequency measurement; Gain; Receivers; Voltage control; 0.1–2.1GHz; 65nm CMOS; SKA; VGA; active loaded; linear-in-dB;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
Type :
conf
DOI :
10.1109/SiRF.2014.6828524
Filename :
6828524
Link To Document :
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