Title :
Integration of a 50 V BVCEO SiGe:C HBT into a 0.25 μm SiGe:C BiCMOS platform
Author :
Sorge, R. ; Schmidt, J. ; Wipf, Christian ; Korndorfer, F. ; Pliquett, R. ; Schulz, K. ; Barth, R.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
We demonstrate the modular integration of a high-voltage SiGe:C HBT with 50V BVCEO into a low cost industrial 0.25 μm SiGe:C BICMOS process. The chosen approach of a lateral drift region is very similar to the construction principles applied to the construction of integrated high voltage LDMOS transistors. The construction of a lateral drift region avoids deep collector wells formed by ion implantation with very high implantation energy or epitaxial layer growth. In the chosen approach the emitter and base construction of the standard SiGe:C HBTs, available in the underlying BiCMOS process, remains unchanged. The BVCEO*ft product of the new device reaches values of 200 VGHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; BVCEO; BiCMOS; HBT; SiGe-C; epitaxial layer growth; integrated high voltage LDMOS transistors; ion implantation; lateral drift region; size 0.25 mum; voltage 50 V; Arrays; BiCMOS integrated circuits; Current measurement; Heterojunction bipolar transistors; Radio frequency; Standards; BiCMOS integrated circuits; bipolar transistor; heterojunction bipolar transistors; microwave circuits; radio-frequency circuits; silicon-germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
DOI :
10.1109/SiRF.2014.6828526