Title :
Effect of i-layer parameters on the performance of Si n+-i-n+ homojunction far-infrared detectors
Author :
Yuan, Haoxin ; Perera, A. G Unil
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
A unified formalism, including space-charge-limited (SCL) conduction, tunneling, and the multiple-image-force effect, is developed to perform a complete analysis of Si n+-i-n+ homojunction interfacial workfunction internal photoemission (HIWIP) FIR detectors. It is shown that due to the space-charge effect, the detector performance, such as cutoff wavelength (λc), quantum efficiency (η), dark current (Id), noise equivalent power (NEP), etc., is strongly influenced by the i-layer thickness (Wi ) and compensating acceptor concentration (Nai) in addition to the emitter layer parameters. As a result, the optimum operating conditions of detectors also depend on W and Nai. The background limited performance (BLIP) is evaluated, and a critical W i value is found for BLIP operation
Keywords :
elemental semiconductors; infrared detectors; photodetectors; silicon; space-charge-limited conduction; tunnelling; work function; SCL conduction; Si; Si n+-i-n+ homojunction FIR detectors; background limited performance; compensating acceptor concentration; cutoff wavelength; dark current; detector performance; emitter layer parameters; far-infrared detectors; i-layer parameters; i-layer thickness; interfacial workfunction; internal photoemission; multiple-image-force effect; noise equivalent power; optimum operating conditions; quantum efficiency; space-charge-limited conduction; tunneling; Astronomy; Dark current; Detectors; Diodes; Finite impulse response filter; Helium; Performance analysis; Photoelectricity; Physics; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
