K-band differential and quadrature digitally-controlled oscillator designs in SiGe BiCMOS technology

Author

Maxey, Christopher ; Raman, S.

Author_Institution

Bradley Dept. of Electr. & Comp. Eng., Virginia Tech, Arlington, VA, USA

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

110

Lastpage

112

Abstract

This paper presents the design of differential and phase-tunable quadrature K-band digitally-controlled oscillators (DCOs) utilizing a tunable-dielectric resonator structure, and preliminary measured results for the differential DCO. The prototype differential oscillator exhibits ~1 GHz of tuning range with eight digitally controlled states. The quadrature oscillator design has 256-state (8-bit) frequency control and a simulated phase tuning authority of > 30 degrees to correct for wide process and operating temperature variability.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MMIC; dielectric resonator oscillators; frequency control; microwave oscillators; DCO; K-band digitally-controlled oscillator; SiGe; SiGe BiCMOS technology; differential digitally-controlled oscillator; frequency control; phase-tunable digitally-controlled oscillators; quadrature digitally-controlled oscillator; simulated phase tuning; tunable-dielectric resonator structure; word length 8 bit; CMOS integrated circuits; Dielectrics; Oscillators; Power transmission lines; Switches; Transmission line measurements; Tuning; BiCMOS integrated circuits; Digital-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on

Conference_Location

Newport Beach, CA

Type

conf

DOI

10.1109/SiRF.2014.6828531

Filename

6828531